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TRANSIENT RADIATION EFFECTS IN GAAS IMPATT DIODESGREILING PT; CLARK J.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 6; PP. 753-754; BIBL. 9 REF.Serial Issue

TEMPERATURE DEPENDENCE OF THE SCHOTTKY BARRIER HEIGHT IN GALLIUM ARSENIDEHACKAM R; HARROP P.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 5; PP. 669-672; ABS. RUSSE; BIBL. 14 REF.Serial Issue

Schottky-barrier enhancement limit for GaAs MESFETsKUMAR, Y; TANDON, V. K; SARKAR, S et al.Physica status solidi. A. Applied research. 2000, Vol 177, Num 1, pp 311-316, issn 0031-8965Conference Paper

AUGMENTATION DE LA HAUTEUR DE BARRIERE DE DIODES DE SCHOTTKY AU SILICIUM: APPLICATION AUX CELLULES SOLAIRES.PONPON JP; SIFFERT P.1975; J. PHYS.; FR.; DA. 1975; VOL. 36; NO 5 SUPPL.; PP. 149-151; ABS. ANGL.; BIBL. 9 REF.Article

Properties of Schottky barrier p-CdxHg1-xTe structures with metal-tunnel transparent dielectricDAMNJANOVIC, V; PONOMARENKO, V. P.SPIE proceedings series. 2003, pp 191-199, isbn 0-8194-4986-5, 9 p.Conference Paper

The problem of correlating Schottky-diode barrier height with an ideality factor using I-V measurementsVERRET, D. P.IEEE electron device letters. 1984, Vol 5, Num 5, pp 142-144, issn 0741-3106Article

BEHAVIOR OF AL-SI SCHOTTKY BARRIER DIODES UNDER HEAT TREATMENTCHINO K.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 119-121; H.T. 1; BIBL. 4 REF.Serial Issue

Modélisation des transistors à effet de champ au GaAs avec barrière de Schottky et un canal à dopage ioniqueSTAROSEL'SKIJ, V. I.Radiotehnika i èlektronika. 1984, Vol 29, Num 9, pp 1814-1819, issn 0033-8494Article

SHALLOW PTSI-SI SCHOTTKY BARRIER CONTACTS FORMED BY A MULTILAYER METALLIZATION TECHNIQUETSAUR BY; SILVERSMITH DJ; MOUNTAIN RW et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5243-5246; BIBL. 8 REF.Article

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A TaSi_x barrier for low resistivity and high reliability of contacts to shallow diffusion regions in siliconNEPPL, F; FISCHER, F; SCHWABE, U et al.Thin solid films. 1984, Vol 120, Num 4, pp 257-266, issn 0040-6090Article

Comment on the paper entitled «characterization of the interface states at Al-GaAs Schottky» barriers with a thin interface layerVAN MEIRHAEGHE, R. L; LAFLERE, W. H; MORANTE, J. R et al.Solid-state electronics. 1984, Vol 27, Num 12, issn 0038-1101, 1157Article

On the mechanism of light-induced effects in hydrogenated amorphous silicon alloysGUHA, S; YANG, J; CZUBATYJ, W et al.Applied physics letters. 1983, Vol 42, Num 7, pp 588-589, issn 0003-6951Article

Theory of beam-induced currents in semiconductorsZOOK, J. D.Applied physics letters. 1983, Vol 42, Num 7, pp 602-604, issn 0003-6951Article

Schottky-barrier diodes of MBE-deposited antimony on n and p gallium arsenideCHENG, H; ZHANG, X.-J; MILNES, A. G et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1117-1122, issn 0038-1101Article

Photoelectric effects in dye-sensitized Langmuir-Blodgett film diodesSAITO, M; SUGI, M; FUKUI, T et al.Thin solid films. 1983, Vol 100, Num 2, pp 117-120, issn 0040-6090Article

CHARACTERISTICS OF SCHOTTKY DIODES AT 10.6 MU MINOUE N; HARAKAWA K; YASUOKA Y et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 268-269; BIBL. 9 REF.Article

PHOTOACOUSTIC DETERMINATION OF THE INTERNAL QUANTUM EFFICIENCY OF SCHOTTKY DIODESTHIELEMANN W; NEUMANN H.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 61; NO 2; PP. K123-K126; BIBL. 5 REF.Article

Hydrogen sensitivity of Pt-Pd/p-CaFe₂O₄ diodeMATSUMOTO, Y; YOSHIKAWA, T; SATO, E et al.Materials research bulletin. 1989, Vol 24, Num 3, pp 331-342, issn 0025-5408Article

Deep-level and profile effects upon low-noise ion-implanted GaAs MESFET'sTREW, R. J; ALI KHATIBZADEH, M; MASNARI, N. A et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 877-882, issn 0018-9383Article

SCHOTTKEY RECTIFIERS ON SILICON USING HIGH BARRIERSSTOLT L; BOHLIN K; TOVE PA et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 295-297; BIBL. 6 REF.Article

Monolithic integration of surge protection diodes into low-noise GaAs MESFET'sHAGIO, M; KANAZAWA, K; NAMBU, S et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 892-895, issn 0018-9383Article

SCHOTTKY CONTACT FABRICATION FOR GAAS MESFET'SMIERS TH.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1795-1799; BIBL. 26 REF.Article

Schottky-barrier-induced spin relaxation in spin injectionWANG, Y. Y; WU, M. W.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 153301.1-153301.4, issn 1098-0121Article